| PART |
Description |
Maker |
| AGR18125E AGR18125EF AGR18125EU |
125 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| AWB7132P8 |
2.30 to 2.40 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
| AWB7227 AWB7227RM52P7 |
2.11 to 2.17 GHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
| AWB7223R AWB7223RM52P8 |
1.930 -1.995 GHz Small-Cell Power Amplifier Module
|
ANADIGICS, Inc
|
| SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 |
Super SIDELED High-Current LED 超SIDELED高电流LED
GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH
OSRAM GmbH
|
| Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487 |
From old datasheet system
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳
GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| AWB7129P8 |
925 - 960 MHz Small-Cell Power Amplifier Module
|
Skyworks Solutions
|
| TQP9218 |
1805 - 1880 MHz, 0.25 Watt, High Linearity Small Cell Power Amplifier
|
Qorvo
|
| 657-079 |
Dummy Stowage Receptacle for 805 Connectors
|
Glenair, Inc.
|
| IRL530 IRL530A |
RES 0R .1W 1% MF 805 CHP
Advanced Power MOSFET
|
Fairchild Semiconductor Corporation
|
